Semiconductor Informations
| P6NK90ZFP STMicroelectronics - STP6NK90ZFP STP6NK90Z - STP6NK90ZFP STB6NK90Z N-CHANNEL 900V - 1.75Ω - 5.8A TO-220, TO-220FP, D2PAK Zener-Protected SuperMESH™Power MOSFET TYPE STP6NK90Z STP6NK90ZFP STB6NK90Z s s s s s s VDSS 900 V 900 V 900 V RDS(on) <2Ω <2Ω <2Ω ID 5.8 A 5.8 A 5.8 A Pw 140 W 30 W 140 W 3 1 2 TYPICAL RDS(on) = 1.75 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRIN |
| P6N60FI STP6N60FI - ST Microelectronics ( t : ) STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP6N60FI s s s s s VDSS 600 V R DS(on) < 1.2 Ω ID 3.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION 3 1 2 APPLI |
| P6NA60FI STP6NA60FI - ST Microelectronics STP6NA60 STP6NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP6NA60 STP6NA60FI s s s s s s s V DSS 600 V 600 V R DS( on) < 1.2 Ω < 1.2 Ω ID 6.5 A 3.9 A TYPICAL RDS(on) = 1 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC |
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