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STMicroelectronics
STP6NK90ZFP
N-channel 900 V, 1.56 Ohm, 5.8 A TO-220FP Zener-protected SuperMESH(TM) Power MOSFET
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Rochester Electronics | 2,000 | Visit Site | |||
| Verical | 808 | Visit Site | |||
| Arrow Electronics | 809 | 1.3906 | Visit Site | ||
| TME | 265 | 3.85 | Visit Site | ||
| DigiKey | 281 | 4.53 | Visit Site | ||
| Weyland Electronics Group Pte. Ltd. | 10,541 | 0.76 | Visit Site | ||
| Win Source | 30,000 | Visit Site | |||
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File Download: P6NK90ZFP.PDF
[ Descriptions ]
| P6NK90ZFP STMicroelectronics - STP6NK90ZFP STP6NK90Z - STP6NK90ZFP STB6NK90Z N-CHANNEL 900V - 1.75Ω - 5.8A TO-220, TO-220FP, D2PAK Zener-Protected SuperMESH™Power MOSFET TYPE STP6NK90Z STP6NK90ZFP STB6NK90Z s s s s s s VDSS 900 V 900 V 900 V RDS(on) <2Ω <2Ω <2Ω ID 5.8 A 5.8 A 5.8 A Pw 140 W 30 W 140 W 3 1 2 TYPICAL RDS(on) = 1.75 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRIN |
Related Information
| P6N60FI STP6N60FI - ST Microelectronics ( t : ) STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP6N60FI s s s s s VDSS 600 V R DS(on) < 1.2 Ω ID 3.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION 3 1 2 APPLI |
| P6NA60 STP6NA60 - STMicroelectronics STP6NA60 STP6NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP6NA60 STP6NA60FI s s s s s s s VDSS 600 V 600 V R DS(on) < 1.2 Ω < 1.2 Ω ID 6.5 A 3.9 A TYPICAL RDS(on) = 1 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC |
Related Part Number
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P6KE180CA | P6KE |