Semiconductor Informations

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| P80NF55 ST Microelectronics - STP80NF55 ® STP80NF55L-06 N - CHANNEL 55V - 0.005 Ω - 80A TO-220 STripFET™ POWER MOSFET TYPE STP80NF55L-06 s s s V DSS 55 V R DS( on ) < 0.0065 Ω ID 80 A TYPICAL RDS(on) = 0.005 Ω LOW THRESHOLD DRIVE LOGIC LEVEL DEVICE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extreme |
| P80NF55-08 STMicroelectronics - STP80NF55-08 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK, I2PAK, TO-220 STripFET™ II POWER MOSFET TYPE STB80NF55-08, -1 STP80NF55-08 s s STP80NF55-08 STB80NF55-08 STB80NF55-08-1 VDSS 55 V 55 V RDS(on) <0.008 Ω <0.008 Ω ID 80 A 80 A 3 1 TYPICAL RDS(on) = 0.0065Ω LOW THRESHOLD DRIVE 3 12 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip- |
| P8008BD N-Channel Enhancement Mode MOSFET - UNIKC P8008BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 80V 80mΩ @VGS = 10V ID 15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ±25 Continuous Dra |
| P8008BDA N-Channel Enhancement Mode MOSFET - UNIKC P8008BDA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 80V 68mΩ @VGS = 10V ID 16A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ±25 Continuous Dr |