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STMicroelectronics
STP9NC60
125KW 30V 55nC@ 10V 600V 750mΩ@ 10V 1.42nF@ 25V TO-220-3 Through hole mounting 9.15mm(height)
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[ Descriptions ]


P9NC60 ST Microelectronics - STP9NC60

N-CHANNEL 600V - 0.6Ω - 9A - TO-220, TO-220FP PowerMesh™II MOSFET TYPE STP9NC60 STP9NC60FP s s s s s STP9NC60 STP9NC60FP VDSS 600 V 600 V RDS(on) < 0.75 Ω < 0.75 Ω ID 9.0 A 9.0 A (*) TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-220 3 1 2 3 1 2 DESCRIPTION The PowerMESH™II is the evolution of


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P9NC60 STP9NC60 - ST Microelectronics

N-CHANNEL 600V - 0.6Ω - 9A - TO-220, TO-220FP PowerMesh™II MOSFET TYPE STP9NC60 STP9NC60FP s s s s s STP9NC60 STP9NC60FP VDSS 600 V 600 V RDS(on) < 0.75 Ω < 0.75 Ω ID 9.0 A 9.0 A (*) TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCH
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STP9NK50Z - STP9NK50ZFP STB9NK50Z N-CHANNEL 500V - 0.72Ω - 7.2A TO-220, TO-220FP, D2PAK Zener-Protected SuperMESH™ Power MOSFET TYPE VDSS RDS(on) ID Pw STP9NK50Z STP9NK50ZFP STB9NK50Z 500 V 500 V 500 V < 0.85 Ω < 0.85 Ω < 0.85 Ω 7.2 A 7.2 A 7.2 A 110 W 30 W 110 W s TYPICAL RDS(




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