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PA110BDA
N—channelchannel, 100V, 18A, Rds(on), 115MΩ@10V, 121MΩ@4.5V, 20VGS(±V)；1.6VTH(V) ENCAPSULATION：TO252
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PA110BDA UNIKC - N-Channel Enhancement Mode MOSFET

PA110BDA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 105mΩ @VGS = 10V ID 15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 15 9.2 20 Avalanche Curren


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