Semiconductor Informations
| PDTA124EE NXP Semiconductors - PNP resistor-equipped transistor DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA124EE PNP resistor-equipped transistor Product speci cation Supersedes data of 1997 Jul 04 File under Discrete Semiconductors, SC04 1998 Jul 23 Philips Semiconductors Product speci cation PNP resistor-equipped transistor FEATURES Built-in bias resistors R1 and R2 (typ. 22 kΩ each) Simplification of circuit design Reduces number of components |
| PDTA124EEF NXP Semiconductors - PNP resistor-equipped transistor DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA124EEF PNP resistor-equipped transistor Product speci cation 2001 Jun 11 Philips Semiconductors Product speci cation PNP resistor-equipped transistor FEATURES Built-in bias resistors R1 and R2 (typical 22 kΩ each) Simplification of circuit design Reduces number of components and board space. APPLICATIONS Especially suitable for space reduct |
| PDT012A0X 12A Digital Pico DLynxTM: Non-Isolated DC-DC Power Modules - Lineage Power Preliminary Data Sheet February 1, 2011 12A Digital Pico DLynxTM: Non-Isolated DC-DC Power Modules 3Vdc 14.4Vdc input; 0.6Vdc to 5.5Vdc output; 12A Output Current Features Compliant to RoHS EU Directive 2002, 95, EC (Z versions) Compatible in a Pb-free or SnPb reflow environment (Z versions |
| PDT0311 Connectorized PIN Photodiodes - Agilent(Hewlett-Packard) Connectorized PIN Photodiodes Technical Data PDT0X1X Features Industry Standard Connectors FC, ST® and SC 1200 nm to 1650 nm Wavelength High Responsivity High Reliability Planar InGaAs Photodiode Range of Flange Options Low Dark Current -40 °C to +85 °C Operation Description The PDT ran |