Semiconductor Informations

File Download: PDTC114E.PDF
| PDTC114EE NXP Semiconductors - NPN resistor-equipped transistor DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114EE NPN resistor-equipped transistor Product speci cation Supersedes data of 1998 Nov 26 1999 May 18 Philips Semiconductors Product speci cation NPN resistor-equipped transistor FEATURES Built-in bias resistors R1 and R2 (typ. 10 kΩ each) Simplification of circuit design Reduces number of components and board space. APPLICATIONS Especiall |
| PDTC114EEF NXP Semiconductors - NPN resistor-equipped transistor DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC114EEF NPN resistor-equipped transistor Product speci cation Supersedes data of 1998 Nov 11 1999 May 31 Philips Semiconductors Product speci cation NPN resistor-equipped transistor FEATURES Power dissipation comparable to SOT23 Built-in bias resistors R1 and R2 (typ. 10 kΩ each) Simplification of circuit design Reduces number of components |
| PDT012A0X 12A Digital Pico DLynxTM: Non-Isolated DC-DC Power Modules - Lineage Power Preliminary Data Sheet February 1, 2011 12A Digital Pico DLynxTM: Non-Isolated DC-DC Power Modules 3Vdc 14.4Vdc input; 0.6Vdc to 5.5Vdc output; 12A Output Current Features Compliant to RoHS EU Directive 2002, 95, EC (Z versions) Compatible in a Pb-free or SnPb reflow environment (Z versions |
| PDT0311 Connectorized PIN Photodiodes - Agilent(Hewlett-Packard) Connectorized PIN Photodiodes Technical Data PDT0X1X Features Industry Standard Connectors FC, ST® and SC 1200 nm to 1650 nm Wavelength High Responsivity High Reliability Planar InGaAs Photodiode Range of Flange Options Low Dark Current -40 °C to +85 °C Operation Description The PDT ran |