Semiconductor Informations

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| PDTC115EE NXP Semiconductors - NPN resistor-equipped transistors; R1 = 100 kW/ R2 = 100 kW DISCRETE SEMICONDUCTORS DATA SHEET PDTC115E series NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ Product speci cation Supersedes data of 2004 Apr 06 2004 Aug 06 Philips Semiconductors Product speci cation NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ FEATURES Built-in bias resistors Simplified circuit design Reduction of component count Reduced pick and |
| PDTC115EEF NXP Semiconductors - NPN resistor-equipped transistors; R1 = 100 kW/ R2 = 100 kW DISCRETE SEMICONDUCTORS DATA SHEET PDTC115E series NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ Product speci cation Supersedes data of 2004 Apr 06 2004 Aug 06 Philips Semiconductors Product speci cation NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ FEATURES Built-in bias resistors Simplified circuit design Reduction of component count Reduced pick and |
| PDT012A0X 12A Digital Pico DLynxTM: Non-Isolated DC-DC Power Modules - Lineage Power Preliminary Data Sheet February 1, 2011 12A Digital Pico DLynxTM: Non-Isolated DC-DC Power Modules 3Vdc 14.4Vdc input; 0.6Vdc to 5.5Vdc output; 12A Output Current Features Compliant to RoHS EU Directive 2002, 95, EC (Z versions) Compatible in a Pb-free or SnPb reflow environment (Z versions |
| PDT0311 Connectorized PIN Photodiodes - Agilent(Hewlett-Packard) Connectorized PIN Photodiodes Technical Data PDT0X1X Features Industry Standard Connectors FC, ST® and SC 1200 nm to 1650 nm Wavelength High Responsivity High Reliability Planar InGaAs Photodiode Range of Flange Options Low Dark Current -40 °C to +85 °C Operation Description The PDT ran |