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PHPT60606NYX
Bipolar (BJT) Single Transistor, NPN, 60 V, 6 A, 1.35 W, SOT-669, Surface Mount
DistributorStock110100Link
Rochester Electronics1,5800.4945Visit Site
UnikeyIC1,503Visit Site
Verical1,500Visit Site
DigiKey1,4151.010.6280.4086Visit Site
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Weyland Electronics Group Pte. Ltd.7300.75Visit Site
Win Source730Visit Site
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PHPT60606NY NXP Semiconductors - NPN high power bipolar transistor

PHPT60606NY 60 V, 6 A NPN high power bipolar transistor 8 December 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60606PY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PC


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