Semiconductor Informations
| PJA138K Pan Jit International - 50V N-Channel Enhancement Mode MOSFET PPJA138K 50V N-Channel Enhancement Mode MOSFET ESD Protected Voltage Features 50 V Current 500mA SOT-23 Unit : inch(mm) RDS(ON) , VGS@10V, ID@500mA<1.6Ω RDS(ON) , VGS@4.5V, ID@200mA<2.5Ω RDS(ON) , VGS@2.5V, ID@100mA<4.5Ω Advanced Trench Process Technology Specially Designed for Battery Operated Systems, SolidState Relays Drivers: Relay, Displays, Memories, etc. ESD Protected Lea |
| PJA138K 50V N-Channel Enhancement Mode MOSFET - Pan Jit International PPJA138K 50V N-Channel Enhancement Mode MOSFET ESD Protected Voltage Features 50 V Current 500mA SOT-23 Unit : inch(mm) RDS(ON) , VGS@10V, ID@500mA<1.6Ω RDS(ON) , VGS@4.5V, ID@200mA<2.5Ω RDS(ON) , VGS@2.5V, ID@100mA<4.5Ω Advanced Trench Process Technology Specially Designed for Ba |
| PJA138L N-Channel Enhancement Mode MOSFET - Pan Jit International PPJA138L 60V N-Channel Enhancement Mode MOSFET Voltage 60 V Current 250mA Features RDS(ON) , VGS@10V, ID@250mA<4.2Ω RDS(ON) , VGS@4.5V, ID@100mA<5Ω RDS(ON) , VGS@2.5V, ID@50mA<7Ω Advanced Trench Process Technology ESD Protected Specially Designed for Relay driver, Speed line drive, |