Semiconductor Informations

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| PN2222 Micro Electronics - NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| PN2222 Fairchild Semiconductor - General Purpose Transistor PN2222 PN2222 General Purpose Transistor 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 60 30 5 600 625 |
| PN200 PNP General Purpose Amplifier - Fairchild Semiconductor PN200 , MMBT200 , PN200A , MMBT200A Discrete POWER & Signal Technologies PN200 PN200A MMBT200 MMBT200A C E C B TO-92 E SOT-23 Mark: N2 , N2A B PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Pr |
| PN200A PNP General Purpose Amplifier - Fairchild Semiconductor PN200 , MMBT200 , PN200A , MMBT200A Discrete POWER & Signal Technologies PN200 PN200A MMBT200 MMBT200A C E C B TO-92 E SOT-23 Mark: N2 , N2A B PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Pr |