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RF1S70N03
Power Field-Effect Transistor, 70A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...
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[ Descriptions ]
| RF1S70N03 Fairchild Semiconductor - N-Channel Power MOSFETs RFP70N03, RF1S70N03, RF1S70N03SM Data Sheet January 2002 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching |
| RF1S70N03 Harris - Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs SEMICONDUCTOR RFP70N03, RF1S70N03, RF1S70N03SM December 1995 70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Features 70A, 30V rDS(ON) = 0.010Ω Temperature Compensating PSPICE Model Peak Current vs Pulse Width Curve UIS Rating Curve (Single Pulse) +175oC Operating Temperature Description The RFP70N03, RF1S70N03, and RF1S70N03SM N-Channel power MOSFETs are manufactur |
Related Information
| RF1001 Fast recovery Diodes - ROHM Semiconductor RF Diodes 1series Fast recovery Diodes (Silicon Epitaxial Planar) RF 1 series zExternal dimensions (Unit : mm) CPD 1.5 5.5 2.3 0.5 zApplications High frequency rectification zFeatures 1) Ultra low VF very fast recovery 2) Fast recovery 3) Low switching loss 4) Standard package TO-220FN, CPD 5 |
| RF1S70N03 N-Channel Power MOSFETs - Fairchild Semiconductor RFP70N03, RF1S70N03, RF1S70N03SM Data Sheet January 2002 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, |
Related Part Number
RF-500TB-14415-MV | RFP70N03 |RF2690 | RF-300EA-1D390 |
RF2001 | RF2001T3D |