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onsemi
RHRP1560
onsemi Rectifier diode Diodes, 15A, 600V, Through hole mounting, TO-220ACencapsulation, 2needle
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|---|---|---|---|---|---|
| Rochester Electronics | 4,840 | Visit Site | |||
| Verical | 4,840 | Visit Site | |||
| Microchip USA | 237 | Visit Site | |||
| Component Stockers USA | 13,059 | 0.75 | Visit Site | ||
| Win Source | 30,000 | Visit Site | |||
| Worldway Electronics | 9,077 | Visit Site | |||
| Esaler Electronic | 800 | 0.845 | Visit Site | ||
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File Download: RHRP1560.PDF
[ Descriptions ]
| RHRP1560 Intersil Corporation - 15A/ 400V - 600V Hyperfast Diodes RHRP1540, RHRP1560 Data Sheet January 2000 File Number 3685.2 15A, 400V - 600V Hyperfast Diodes The RHRP1540 and RHRP1560 are hyperfast diodes with soft recovery characteristics (trr < 35ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction. These devices are intended for use as freewheeling, clamping diodes and r |
| RHRP1560 Fairchild - (RHRP1540 / RHRP1560) 400V - 600V Hyperfast Diodes Data Sheet 15 A, 400 V - 600 V, Hyperfast Diode The RHRP1540, RHRP1560 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling, clamping diodes and diodes in a variety of switching power supplies and other power swi |
Related Information
| RHRP1560 15A/ 400V - 600V Hyperfast Diodes - Intersil Corporation RHRP1540, RHRP1560 Data Sheet January 2000 File Number 3685.2 15A, 400V - 600V Hyperfast Diodes The RHRP1540 and RHRP1560 are hyperfast diodes with soft recovery characteristics (trr < 35ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epita |
| RHRP1560 (RHRP1540 / RHRP1560) 400V - 600V Hyperfast Diodes - Fairchild Data Sheet 15 A, 400 V - 600 V, Hyperfast Diode The RHRP1540, RHRP1560 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as fr |
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