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RJH3047DPK-80#T2

Insulated-Gate Bipolar Transistors (IGBT)

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[ Descriptions ]

RJH3047 ETC - Silicon N-Channel IGBT High Speed Power Switching

Related Information

RJH1BF6RDPQ-80 High Speed Power Switching - Renesas

Preliminary Datasheet RJH1BF6RDPQ-80 Silicon N Channel IGBT High Speed Power Switching Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC

RJH1BF7RDPQ-80 High Speed Power Switching - Renesas

Preliminary Datasheet RJH1BF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC

Related Part Number

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