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Search RJH60F5DPQ Datasheet (PDF)
Renesas
RJH60F5DPQ-A0#T0
IGBT 600V 80A 260.4W TO247A / IGBT Trench 600 V 80 A 260.4 W Through Hole TO-247A
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| Aztech | 1,055 | 20.85 | Visit Site | ||
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File Download: RJH60F5DPQ.PDF
[ Descriptions ]
| RJH60F5DPQ-A0 Renesas - High Speed Power Switching Preliminary Datasheet RJH60F5DPQ-A0 600 V - 40 A - IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) R07 |
| RJH60F5DPQ Renesas - 600V / 80A / IGBT |
Related Information
| RJH1BF6RDPQ-80 High Speed Power Switching - Renesas Preliminary Datasheet RJH1BF6RDPQ-80 Silicon N Channel IGBT High Speed Power Switching Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC |
| RJH1BF7RDPQ-80 High Speed Power Switching - Renesas Preliminary Datasheet RJH1BF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC |
Related Part Number
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