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Trans IGBT Chip N-CH 600V 90A 328900mW 3-Pin(3+Tab) TO-3P Tube

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RJH60F7ADPK Renesas Technology - Silicon N Channel IGBT

RJH60F7ADPK Silicon N Channel IGBT High Speed Power Switching Features High speed switching Low on-state voltage Fast recovery diode Preliminary REJ03G1837-0100 Rev.1.00 Oct 13, 2009 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) E 1 2 3 Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltag


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RJH1BF6RDPQ-80 High Speed Power Switching - Renesas

Preliminary Datasheet RJH1BF6RDPQ-80 Silicon N Channel IGBT High Speed Power Switching Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC
RJH1BF7RDPQ-80 High Speed Power Switching - Renesas

Preliminary Datasheet RJH1BF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC



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