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Renesas
RJK0389DPA-00-J53
Power Field-Effect Transistor, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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[ Descriptions ]


RJK0389DPA Renesas Technology - Silicon N Channel Power MOS FET Power Switching

RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G1722-0300 Rev.3.00 Dec 03, 2008 Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DD-A (Package name: WPAK-D2) 2 3 4 D1 D1 D1 9 S1, D2 5 6 7 8 5 6 7 8 1 G1 8 G2 9 4 3 2 1 4 3 2 1 1, 8 Gate 2, 3, 4,


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RJK0389DPA Silicon N Channel Power MOS FET Power Switching - Renesas Technology

RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G1722-0300 Rev.3.00 Dec 03, 2008 Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DD-A (Package name:
RJK0822SPN Silicon N Channel Power MOS FET - Renesas

RJK0822SPN Silicon N Channel Power MOS FET Power Switching Features Low on-resistance RDS(on) = 7.9mΩ typ.(at VGS = 10V) High speed switching Low drive current Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline Rev.1.00 September.26.2007 Note: This product is




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