Semiconductor Informations
| RJK0389DPA Silicon N Channel Power MOS FET Power Switching - Renesas Technology RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G1722-0300 Rev.3.00 Dec 03, 2008 Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DD-A (Package name: |
| RJK0822SPN Silicon N Channel Power MOS FET - Renesas RJK0822SPN Silicon N Channel Power MOS FET Power Switching Features Low on-resistance RDS(on) = 7.9mΩ typ.(at VGS = 10V) High speed switching Low drive current Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline Rev.1.00 September.26.2007 Note: This product is |