Semiconductor Informations

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| RJK5013DPP Renesas Technology - Silicon N Channel MOS FET High Speed Power Switching RJK5013DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1585-0100 Rev.1.00 Sep 28, 2007 Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D G 1. Gate 2. Drain 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain |
| RJK0389DPA Silicon N Channel Power MOS FET Power Switching - Renesas Technology RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G1722-0300 Rev.3.00 Dec 03, 2008 Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DD-A (Package name: |
| RJK0822SPN Silicon N Channel Power MOS FET - Renesas RJK0822SPN Silicon N Channel Power MOS FET Power Switching Features Low on-resistance RDS(on) = 7.9mΩ typ.(at VGS = 10V) High speed switching Low drive current Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline Rev.1.00 September.26.2007 Note: This product is |