Semiconductor Informations

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| RJK60S7DPP-E0 Renesas - 600V - 30A - SJ MOS FET Preliminary Datasheet RJK60S7DPP-E0 600V - 30A - SJ MOS FET High Speed Power Switching Features Superjunction MOSFET Low on-resistance RDS(on) = 0.1 typ. (at ID = 15 A, VGS = 10 V, Ta = 25 C) High speed switching tf = 9 ns typ. (at ID = 15 A, VGS = 10 V, RL = 20 , Rg = 10 , Ta = 25 C) R07DS0643EJ0300 Rev.3.00 Dec 10, 2012 Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) |
| RJK0389DPA Silicon N Channel Power MOS FET Power Switching - Renesas Technology RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G1722-0300 Rev.3.00 Dec 03, 2008 Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DD-A (Package name: |
| RJK0822SPN Silicon N Channel Power MOS FET - Renesas RJK0822SPN Silicon N Channel Power MOS FET Power Switching Features Low on-resistance RDS(on) = 7.9mΩ typ.(at VGS = 10V) High speed switching Low drive current Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline Rev.1.00 September.26.2007 Note: This product is |