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RJP2557DPK-E

Insulated-Gate Bipolar Transistors (IGBT)

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[ Descriptions ]

RJP2557DPK Renesas Technology - IGBT

April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat) High-speed switching PDP System PDP trends Scan IC Power device High breakdown voltage Low resistance High speed switching Wide MOSFET line-ups High Speed IGBT Y Sustain circuit Panel X Sustain circuit High Intensity High pressure Gas High E

RJP2557 Renesas - 270V / 50A / IGBT ( RJP2557DPK )

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