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[ Descriptions ]
| RJP30E2DPK-M0 Renesas - N-Channel Power MOSFET / Transistor Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 μA max R07DS0348EJ0100 Rev.1.00 Apr 12, 2011 Outline RENESAS Package code: PRSS0004ZH-A (Package name: TO-3PSG) C 4 G 1. Gate 2. Col |
| RJP30E2DPP-M0 Renesas - N-Channel Power MOSFET / Transistor Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 μA max Isolated package TO-220FL R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO- |
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