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| RJP30H1DPD Renesas - N-Channel Power MOSFET / Transistor Preliminary Datasheet RJP30H1DPD Silicon N Channel IGBT High speed power switching Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. R07DS0465EJ0200 Rev.2.00 Jun 15, 2011 Outline RENESAS Package code: PRSS0004ZJ-A (Package |
| RJP30H1DPP-M0 Renesas - N-Channel Power MOSFET / Transistor Preliminary Datasheet RJP30H1DPP-M0 Silicon N Channel IGBT High speed power switching Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Isolated package TO-220FL R07DS0466EJ0200 Rev.2.00 Jun 15, 2011 Outline RENESAS Package |
Related Information
| RJP020N06 Drive Nch MOS FET - ROHM Semiconductor RJP020N06 Transistors 2.5V Drive Nch MOS FET RJP020N06 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) MPT3 4.5 1.6 0.5 1.5 zFeatures 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (1) (2) (3) 1.0 2.5 4.0 0.4 0.4 1.5 0.5 1.5 3.0 0.4 zApplications Switc |
| RJP020N06FRA Power MOSFET ( Transistor ) - ROHM Semiconductor RJP020N06FRA Nch 60V 2A Middle Power MOSFET VDSS RDS(on)(Max.) ID PD 60V 240mΩ ±2A 2W lFeatures 1) Low on-resistance 2) Low voltage drive(2.5V drive) 3) AEC-Q101 Qualified lOutline SOT-89 MPT3 lInner circuit Datasheet lPackaging specifications Pack |
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