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| RJP30H2A Renesas - Silicon N Channel IGBT Preliminary Datasheet RJP30H2DPK-M0 , RJP30H2A Silicon N Channel IGBT High speed power switching R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Outline RENESAS Package code: PRSS000 |
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