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| RJP30K3DPP-M0 Renesas - N-Channel Power MOSFET / Transistor Preliminary Datasheet RJP30K3DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.1V typ High speed switching tr = 90 ns typ, tf = 250 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL R07DS0501EJ0100 Rev.1.00 Jul 05, 2011 Outline RENESAS Package code: |
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