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| RJP6065DPM Renesas - N-Channel IGBT Preliminary Datasheet RJP6065DPM Silicon N Channel IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25°C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding R07DS0204EJ0100 Rev.1.00 Nov 19, 2010 Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C G 1. Gate 2. Colle |
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