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RJP63K2DPP-M0 Renesas - N-Channel IGBT

Preliminary Datasheet RJP63K2DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max Isolated package TO-220FL R07DS0468EJ0200 Rev.2.00 Jun 15, 2011 Outline RENESAS Package c
RJP63K2DPK-M0 Renesas - N-Channel IGBT

Preliminary Datasheet RJP63K2DPK-M0 Silicon N Channel IGBT High speed power switching Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max R07DS0469EJ0200 Rev.2.00 Jun 15, 2011 Outline RENESAS Package code: PRSS0004ZH-A (Package



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