Semiconductor Informations

File Download: S9013.PDF
| S9013 Koo Chin - PNP Transistor S9013 TRANSISTOR (NPN) FEATURE - Complementary to S9012 - Excellent hFE linearity MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature Value 40 25 5 500 625 150 -55-150 Units V V V mA mW ℃ ℃ |
| S9013 Fairchild Semiconductor - 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. SS9013 SS9013 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC=500mA) Complementary to SS9012 Excellent hFE linearity. 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collect |
| S9004P2CT 30A SCHOTTKY BARRIER RECTIFIER - Diodes Incorporated S9004P2CT 30A SCHOTTKY BARRIER RECTIFIER Features · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverter |
| S9005P2CT 20A SCHOTTKY BARRIER RECTIFIER - Diodes Incorporated S9005P2CT 20A SCHOTTKY BARRIER RECTIFIER Features · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverter |