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SI2302DS
900MW 8V 1.5V 4.1NC@ 4.5V 2INDIVIDUALNCHANNEL 20V 1.4MΩ@ 50A, 10V 3.5A 880PF SOT-23
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[ Descriptions ]


SI2302DS NXP Semiconductors - N-channel enhancement mode field-effect transistor

SI2302DS N-channel enhancement mode eld-effect transistor Rev. 02 20 November 2001 M3D088 Product data 1. Description N-channel enhancement mode eld-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: SI2302DS in SOT23. 2. Features s s s s TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package. 3. Applic
SI2302DS Vishay - N-Channel MOSFET

Data Sheet FEATURES Input voltage: 4.5 V to 20 V Integrated 44 mΩ high-side MOSFET 0.6 V ± 1% reference voltage over temperature Continuous output current: 6 A Programmable switching frequency: 250 kH- to 1.4 MH- Synchronizes to external clock: 250 kH- to 1.4 MH- 180° out-of-phase synchronization Programmable UVLO Power-good output External compensation Internal soft start with external adjusta


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