Semiconductor Informations
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File Download: SI4684.PDF
[ Descriptions ]
| SI4684DY Vishay Siliconix - N-Channel 30-V (D-S) MOSFET Si4684DY New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) 0.0094 at VGS = 10 V 0.0115 at VGS = 4.5 V ID (A)a 16 14 Qg (Typ) 14 nC FEATURES Extremely Low Qgd WFET® Technology for Low Switching Losses TrenchFET® Power MOSFET 100 % Rg Tested RoHS COMPLIANT APPLICATIONS High-Side DC, DC Conversion - Notebook - Server SO-8 D S S S G 1 2 3 4 T |
| SI4684DY_RC Vaishali Semiconductor - R-C Thermal Model Parameters Si4684DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance |
Related Information
| SI4004DY N-Channel 20 V (D-S) MOSFET - Vishay Siliconix New Product Si4004DY Vishay Siliconix N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.0138 at VGS = 10 V 0.0192 at VGS = 4.5 V ID (A)a, e 12 12 Qg (Typ.) 10.6 nC FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg and UIS Test |
| SI4010 CRYSTAL-LESS SOC RF TRANSMITTER - Silicon Laboratories Si4010 CRYSTAL-LESS SOC RF TRANSMITTER Single Coin-cell Battery Transmitter Supply voltage: 1.8 to 3.6 V Standby current < 10 nA Crystal-less operation Temperature range 40 to +85 °C Automotive quality option, AEC-Q100 10-pin MSOP, 14-pin SOIC Pb free, RoHS compliant RF Transmitter Frequ |
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