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SI4800 NXP Semiconductors - N-channel TrenchMOS logic level FET

SI4800 N-channel TrenchMOS™ logic level FET M3D315 Rev. 02 17 February 2004 Product data 1. Product pro le 1.1 Description N-channel enhancement mode eld-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Low gate charge s Low on-state resistance s Surface mounted package s Fast switching. 1.3 Applications s Portable appliances s Lithium-ion battery char

Si4800BDY Vishay - Fast Switching MOSFET

Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0185 at VGS = 10 V 0.030 at VGS = 4.5 V ID (A) 9 7 FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFET High-Efficient PWM Optimized 100 % UIS and Rg Tested SO-8 S S S G 1 2 3 4 Top View S Ordering Information: Si4800BDY-T1-E3 (Lead (Pb)-free) Si

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New Product Si4004DY Vishay Siliconix N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.0138 at VGS = 10 V 0.0192 at VGS = 4.5 V ID (A)a, e 12 12 Qg (Typ.) 10.6 nC FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg and UIS Test

SI4010 CRYSTAL-LESS SOC RF TRANSMITTER - Silicon Laboratories

Si4010 CRYSTAL-LESS SOC RF TRANSMITTER Single Coin-cell Battery Transmitter Supply voltage: 1.8 to 3.6 V Standby current < 10 nA Crystal-less operation Temperature range 40 to +85 °C Automotive quality option, AEC-Q100 10-pin MSOP, 14-pin SOIC Pb free, RoHS compliant RF Transmitter Frequ