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| SM8205A ANPEC - Dual N-Channel Enhancement Mode MOSFET SM8205A Dual N-Channel Enhancement Mode MOSFET Features 20V, 6A, RDS(ON) =22mΩ(typ.) @ VGS =4.5V RDS(ON) =28mΩ(typ.) @ VGS =2.5V Pin Description D S1 S1 G1 1 2 3 4 8 7 6 5 D S2 S2 G2 Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) TSSOP-8 D Applications Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems G1 |
| SM8205AO Sinopower - Dual N-Channel Enhancement Mode MOSFET SM8205AO ® Dual N-Channel Enhancement Mode MOSFET Features · 18V, 6A, RDS(ON)= 23mW(typ.) @ VGS= 4.5V RDS(ON)= 34mW(typ.) @ VGS= 2.5V · Reliable and Rugged · Lead Free and Green Devices Available (RoHS Compliant) Applications · Power Management in Notebook Computer, Portable Equipment, and Battery Powered Systems. Pin Description D1 S1 S1 G1 D2 S2 S2 G2 Top View of TSSOP - 8 (1) (8) D1 |
Related Information
| SM8.2 TVS Diode, SMD (Transient Voltage Suppressor) - MIC SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR SM6.8 THRU SM200CA Breakdown Voltage Peak Pulse Power 6.8 to 200 Volts 400 Watts FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-O For surface mounted applications Glass passivated junction Low inductance surge r |
| SM8.2A TVS Diode, SMD (Transient Voltage Suppressor) - MIC SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR SM6.8 THRU SM200CA Breakdown Voltage Peak Pulse Power 6.8 to 200 Volts 400 Watts FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-O For surface mounted applications Glass passivated junction Low inductance surge r |
Related Part Number
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