Semiconductor Informations
| SSS4N60B Fairchild Semiconductor - 600V N-Channel MOSFET SSP4N60B, SSS4N60B SSP4N60B, SSS4N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and comm |
| SSS1004 N-Channel enhancement mode power field effect transistors - Silikron Semiconductor Main Product Characteristics VDSS RDS(on) 100V 3.7mΩ (typ.) ID 180A ① Features and Benefits TO-220 Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery |
| SSS1004 N-Channel MOSFET - GOOD-ARK Main Product Characteristics VDSS 100V RDS(on) 3.4mΩ (typ.) ID 180A ① Features and Benefits TO-220 Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery |