Semiconductor Informations
| STD3N25 STMicroelectronics - N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR STD3N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD3N25 s s s s s V DSS 250 V R DS( on) < 2Ω ID 3A s s TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL |
| STD01N Darlington Transistors for Audio Amplifiers - Sanken electric STD01N and STD01P Darlington Transistors for Audio Amplifiers Features and Benefits Built-in temperature compensation diodes High power (100 W) handling in a small package (TO-3P), for minimized heat sink requirements Built-in drivers and temperature compensation diodes, reducing external compo |
| STD01P Darlington Transistors for Audio Amplifiers - Sanken electric STD01N and STD01P Darlington Transistors for Audio Amplifiers Features and Benefits Built-in temperature compensation diodes High power (100 W) handling in a small package (TO-3P), for minimized heat sink requirements Built-in drivers and temperature compensation diodes, reducing external compo |
Please enter the part number you wish to download in the search bar above.