Semiconductor Informations

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| SVF4N65F SL - 650V N-channel enhancement mode MOSFET SVF4N65T, F(G), M_Datasheet 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N65T, F(G), M is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching per |
| SVF4N65FG SL - 650V N-channel enhancement mode MOSFET SVF4N65T, F(G), M_Datasheet 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N65T, F(G), M is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching per |
| SVF10N60F 600V N-CHANNEL MOSFET - Silan Microelectronics SVF10N60T, F, FG, S, K_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N60T, F, FG, S, K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved gu |
| SVF10N60FG 600V N-CHANNEL MOSFET - Silan Microelectronics SVF10N60T, F, FG, S, K_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N60T, F, FG, S, K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved gu |