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TA36N30P IXYS Corporation - IXTA36N30P

Advanced Technical Information PolarHTTM Power MOSFET N-Channel Enhancement Mode IXTQ 36N30P IXTA 36N30P IXTP 36N30P VDSS ID25 RDS(on) = = = 300 V 36 A 110 mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGSM ID25 IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings 300 300 ± 20 V V V A A A mJ J V, ns W °C °C °C °C °C

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