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TGA1135B-SCC
Wide Band Medium Power Amplifier, 18000MHz Min, 27000MHz Max, 1 Func, GAAS
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[ Descriptions ]
| TGA1135B TriQuint Semiconductor - 18-27.5 GHz 1W Power Amplifier Advance Product Information Feb 4, 2000 18-27.5 GH- 1W Power Amplifier TGA1135B Key Features 0.25 um pHEMT Technology 14 dB Nominal Gain at 23GH- 30 dBm Nominal P1dB 38dBm OTOI typical Typical 15dB Input, Output RL Bias 6 - 7V @ 540 mA On-chip power detector diode Chip Dimensions 2.641 mm x 1.480 mm Primary Applications Point-to-Point Radio Point-to-Multipoint Communications Ka Band |
Related Information
| TGA1135B 18-27.5 GHz 1W Power Amplifier - TriQuint Semiconductor Advance Product Information Feb 4, 2000 18-27.5 GH- 1W Power Amplifier TGA1135B Key Features 0.25 um pHEMT Technology 14 dB Nominal Gain at 23GH- 30 dBm Nominal P1dB 38dBm OTOI typical Typical 15dB Input, Output RL Bias 6 - 7V @ 540 mA On-chip power detector diode Chip Dimensions 2.641 mm |
| TGA2573 2-18 GHz 10 Watt GaN Amplifier - TriQuint Semiconductor TGA2573 2-18 GH- 10 Watt GaN Amplifier Applications Military Radar Communications Electronic warfare Electronic counter measures Test Equipment Product Features Frequency Range: 2 18 GH- Psat: 40.0 dBm at Vd=30 V PAE: 25% typical Small Signal Gain: 9 dB Return Loss: 15 dB Bias: Vd = 30 V |