Semiconductor Informations

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| TIP33C STMicroelectronics - Complementary power transistors TIP33C TIP34C Complementary power transistors Features . - Low collector-emitter saturation voltage - Complementary NPN - PNP transistors t(s)Applications c- General purpose roduDescription PThe devices are manufactured in epitaxial-base teplanar technology and are suitable for power Obsolete Product(s) - Obsolelinear and switching applications. 3 2 1 TO-247 Figure 1. Internal schematic dia |
| TIP33C KEC(Korea Electronics) - EPITAXIAL PLANAR NPN TRANSISTOR (HIGH POWER AMPLIFIER) |
| TIP100 Monolithic Construction - SemiHow TIP100, 101, 102 TIP100, 101, 102 ◎ SEMIHOW REV.A0,Oct 2007 TIP100, 101, 102 TIP100, 101, 102 Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Vo |
| TIP100 Darlington NPN Power Transistors - TAITRON Darlington Power Transistors (NPN) TIP100, 101, 102 Darlington Power Transistors (NPN) Features Designed for general-purpose amplifier and low speed switching applications RoHS Compliant Mechanical Data Case: Terminals: Weight: TO-220, Plastic Package Solderable per MIL-STD-202, Method 208 0.0 |