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[ Descriptions ]
| TIP35A Motorola Semiconductors - COMPLEMENTARY SILICON POWER TRANSISTORS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP35A, D Complementary Silicon High-Power Transistors . . . for general purpose power amplifier and switching applications. 25 A Collector Current Low Leakage Current ICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain hFE = 40 Typ @ 15 A High Current Gain Bandwidth Product hfe = 3.0 min @ IC = 1.0 A, f = 1.0 MHz |
| TIP35A ON Semiconductor - Complementary Silicon High-Power Transistors TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) Complementary Silicon High-Power Transistors Designed for general purpose power amplifier and switching applications. Features 25 A Collector Current Low Leakage Current ICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain hFE = 40 Typ @ 15 A High Current Gain Bandwidth Product hfe = 3.0 min @ IC = 1.0 A, f = 1.0 MHz These are Pb Fre |
Related Information
| TIP100 Monolithic Construction - SemiHow TIP100, 101, 102 TIP100, 101, 102 ◎ SEMIHOW REV.A0,Oct 2007 TIP100, 101, 102 TIP100, 101, 102 Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Vo |
| TIP100 Darlington NPN Power Transistors - TAITRON Darlington Power Transistors (NPN) TIP100, 101, 102 Darlington Power Transistors (NPN) Features Designed for general-purpose amplifier and low speed switching applications RoHS Compliant Mechanical Data Case: Terminals: Weight: TO-220, Plastic Package Solderable per MIL-STD-202, Method 208 0.0 |
Related Part Number
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TIP31C | TIP3055 |