Semiconductor Informations
| TK150E09NE MOSFET ( Transistor ) - Toshiba Semiconductor TK150E09NE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSⅧ-H) TK150E09NE E-Bike Low drain source ON resistance : RDS (ON) = 3.6 mΩ (typ.) (VGS = 10 V) Low leakage current : IDSS = 10 μA (max) (VDS = 85 V) Enhancement mode : Vth = 2.5~4.5 V (VDS = 10 V, ID = 1.0 mA) |
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