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| TK30A06J3A Toshiba Semiconductor - Field Effect Transistor TK30A06J3A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSⅢ) TK30A06J3A Switching Regulator Applications - - - - Low drain-source ON-resistance: RDS (ON) = 19 mΩ (typ.) High forward transfer admittance: |Yfs| = 34 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta |
Related Information
| TK30A06J3A Field Effect Transistor - Toshiba Semiconductor TK30A06J3A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSⅢ) TK30A06J3A Switching Regulator Applications - - - - Low drain-source ON-resistance: RDS (ON) = 19 mΩ (typ.) High forward transfer admittance: |Yfs| = 34 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) |
| TK3L10 (TK3Lxx) High Voltage High Speed Switching Transistors - Shindengen Electric HIGH VOLTAGE HIGH SPEED SWITCHING TRANSISTORS HDT series Bipolar transistors (NPN) ITO-220 Absolute Maximum Ratings Electrical Characteristics Tstg TJ VCEO (sus) (min) [V] hFE (min) VCE (sat) (max) [V] VBE (sat) (max) [V] TO-220 MTO-3P VRM Type No. [V] VCEO VEBO IC IB PT θjc (max) fT |
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