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Search TK6P60W Datasheet (PDF)
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Newark | 1,988 | 1.43 | Visit Site | ||
| Worldway Electronics | 22,689 | Visit Site | |||
| UnikeyIC | 4,000 | Visit Site | |||
| LCSC | 2,000 | 2.8024 | Visit Site | ||
| Unikeyic (ICkey) | 4,000 | Visit Site | |||
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File Download: TK6P60W.PDF
[ Descriptions ]
| TK6P60W Freescale - Silicon N-Channel MOS TK6P60W MOSFETs Silicon N-Channel MOS (DTMOS ) 1. Applications Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.68 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.31 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source DPAK 4. |
Related Information
| TK60A08J1 MOSFETs - Toshiba Semiconductor TK60A08J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ) TK60A08J1 Switching Regulator Application High-Speed switching Small gate charge: Qg = 86 nC (typ.) Low drain-source ON resistance: RDS (ON) = 6.2 mΩ (typ.) High forward transfer admittance: |Yfs |
| TK60D08J1 Field Effect Transistor - Toshiba Semiconductor TK60D08J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ) TK60D08J1 Switching Regulator Application High-Speed switching Small gate charge: Qg = 86 nC (typ.) Low drain-source ON resistance: RDS (ON) = 6.2 mΩ (typ.) High forward transfer admittance: |Yf |
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