Semiconductor Informations

File Download: TMD1414-2C.PDF
| TMD1414-2C Toshiba Semiconductor - MICROWAVE POWER MMIC AMPLIFIER MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA TMD1414-2C FEATURES n HIGH POWER P1dB=34.5dBm at 13.75GH- to 14.5GH- n HIGH GAIN G1dB=26.0dB at 13.75GH- to 14.5GH- n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS Drain Supply Voltage Gate Supply Voltage Input Power Flange Temperature Storage Temperature |
| TMD1414-2C MICROWAVE POWER MMIC AMPLIFIER - Toshiba Semiconductor MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA TMD1414-2C FEATURES n HIGH POWER P1dB=34.5dBm at 13.75GH- to 14.5GH- n HIGH GAIN G1dB=26.0dB at 13.75GH- to 14.5GH- n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTE |
| TMDSEVM6678 Evaluation Module / Board - Texas Instruments |