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TPC8107 Toshiba Semiconductor - TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)

TPC8107 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC8107 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications · · · · · Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 5.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 31 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS =

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