Search TPT5609 Datasheet (PDF)

MCC
TPT5609A-AP
Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
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[ Descriptions ]

TPT5609 WEJ - NPN Transistor

TPT5609 TPT5609 TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 1 Collector-base voltage A V(BR)CBO: 25 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-e
TPT5609 TP - NPN SILICON TRANSISTOR

TPT5609 NPN SILICON TRANSISTOR           !   ""#$%&                        


Related Information

TPT5609 NPN Transistor - WEJ

TPT5609 TPT5609 TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 1 Collector-base voltage A V(BR)CBO: 25 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 123 ELECTRICAL CHARACTERIS
TPT5609 NPN SILICON TRANSISTOR - TP

TPT5609 NPN SILICON TRANSISTOR           !   ""#$%&         



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