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STMicroelectronics
STW12NA60
12 A 600 V 0.6 Ohm N-channel Si Power Mosfet TO-247
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W12NA60 STMicroelectronics - STW12NA60

STH12NA60, FI STW12NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STH12NA60 STH12NA60FI STW12NA60 s s s s s s s V DSS 600 V 600 V 600 V R DS( on) < 0.6 Ω < 0.6 Ω < 0.6 Ω ID 12 A 7A 12 A TO-247 TYPICAL RDS(on) = 0.44 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUC


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W12NA60 STW12NA60 - STMicroelectronics

STH12NA60, FI STW12NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STH12NA60 STH12NA60FI STW12NA60 s s s s s s s V DSS 600 V 600 V 600 V R DS( on) < 0.6 Ω < 0.6 Ω < 0.6 Ω ID 12 A 7A 12 A TO-247 TYPICAL RDS(on) = 0.44 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALAN
W12NC60 STW12NC60 - STMicroelectronics

N-CHANNEL 600V - 0.48Ω - 12A TO-247 PowerMesh™ II MOSFET TYPE STW12NC60 s s s s s STW12NC60 VDSS 600V RDS(on) < 0.55Ω ID 12 A TYPICAL RDS(on) = 0.48Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 1 3 2 DESCRIPTION The PowerMESH




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