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W8NB90 ST Microelectronics - STW8NB90

N-CHANNEL 900V - 1.1 Ω - 8 A TO-247, ISOWATT218 PowerMesh™ MOSFET TYPE STW8NB90 STH8NB90FI s s s s s STW8NB90 STH8NB90FI VDSS 900 V 900 V RDS(on) < 1.45 Ω < 1.45 Ω ID 8A 5A TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-247 3 2 1 3 2 1 DESCRIPTION Using the latest high voltage MESH OVERLA



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W8NB90 STW8NB90 - ST Microelectronics

N-CHANNEL 900V - 1.1 Ω - 8 A TO-247, ISOWATT218 PowerMesh™ MOSFET TYPE STW8NB90 STH8NB90FI s s s s s STW8NB90 STH8NB90FI VDSS 900 V 900 V RDS(on) < 1.45 Ω < 1.45 Ω ID 8A 5A TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANC