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VBsemi
WFD830-VB
650V, 5A, Rds(on), 950M¦¸@10V, 30VGS(¡ÀV), 3.5VTH(V) N£¨fet£©, Sj_multi-epi, TO252, Nfet
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[ Descriptions ]

WFD830 Winsemi - Silicon N-Channel MOSFET

http:, , www.nDatasheet.com D830 WF WFD Silicon N-Channel MOSFET Features - 4.5A,500V,RDS(on)(Max 1.5Ω)@VGS=10V - Ultra-low Gate Charge(Typical 32nC) - Fast Switching Capability - 100%Avalanche Tested - Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi ’s advanced planar stripe, DMOS technology. This latest technology has been especial


Related Information

WFD830 Silicon N-Channel MOSFET - Winsemi

http:, , www.nDatasheet.com D830 WF WFD Silicon N-Channel MOSFET Features - 4.5A,500V,RDS(on)(Max 1.5Ω)@VGS=10V - Ultra-low Gate Charge(Typical 32nC) - Fast Switching Capability - 100%Avalanche Tested - Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced



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