ASX1436 Datasheet – MMIC Power Amplifier

The ASX1436 is a specialized type of integrated circuit called a monolithic microwave integrated circuit (MMIC) power amplifier. It’s specifically designed to amplify radio frequency (RF) signals within a narrow frequency range, from 13.75 gigahertz (GHz) to 14.50 GHz.

Function: Ku Band Power Amplifier MMIC

Package: 10-lead Flange Type

Manufacturer: ASB Inc. ( https://www.asb.co.kr/ )

Description

ASX1436 is a three-stage internally matched MMIC Power Amplifier which operates between 13.75 GHz
and 14.50 GHz frequency range. This product is well suited for VSAT applications.

This amplifier is particularly well-suited for very small aperture terminal (VSAT) applications. VSATs are satellite communication terminals used for two-way satellite communications, such as internet access, voice communication, and data transfer.

Image and pinouts

ASX1436 datasheet pinout

Features

1. Frequency Range: 13.75 – 14.50 GHz

2. Saturated Output Power: 35 dBm

3. Power Added Efficiency: 28 %

4. Small Signal Gain: 31.5 dB

5. Output Third Order Intercept Point: 41.5 dBm

6 Bias: VDD = +7 V, IDD = 1300 mA, VGG = -0.8 V (Typical)

7. 100% DC and RF tested

Application Circuits

ASX1436 circuit

Applications

1. Ku Band VSAT

2. Point to Point Radio

ASX1436 Datasheet PDF

 pdf

BGU8052 Datasheet – Low Noise High Linearity Amplifier

BGU8052 is a low-noise amplifier (LNA) IC designed for use in radio frequency (RF) applications.

Function: Low Noise High Linearity Amplifier

Package: HWSON8, 2mm × 2 mm × 0.75 mm 8-terminal plastic thin small outline package Type

Manufacturer: NXP Semiconductors

Image

BGU8052 datasheet pdf

Description

The BGU8052 is, also known as the BGTS1001M, a low noise high linearity amplifier for wireless infrastructure applications, equipped with fast shutdown to support TDD systems. The LNA has a high input and output return loss and is designed to operate between 1.5 GHz and 2.5 GHz.

Features

• Low noise performance: NF = 0.50 dB

• High linearity performance: IP3O = 36 dBm

• High input return loss > 15 dB

• High output return loss > 20 dB

• Unconditionally stable up to 20 GHz

• Programmable bias current (via resistor)

• ESD protection on all terminals

• Moisture sensitivity level 1

• Fast shut down to support TDD systems

• 3 V to 5 V single supply

Pinouts

BGU8052 pinout

1. VBIAS,  bias voltage

2. RF_IN,  RF input

3. n.c.,  not connected

4, 5, 8. i.c.,  internally connected. Can be grounded or left open in the application.

6. SHDN,  shutdown

7. RF_OUT,  RF output

Exposed die pad. GND,  ground

Applications

• Wireless infrastructure

• Low noise and high linearity applications

• LTE, W-CDMA, CDMA, GSM

• General-purpose wireless applications

• TDD or FDD systems

• Suitable for small cells

BGU8052 Datasheet PDF

BGU8052 pdf