G4PF50WD PDF Datasheet – N-Ch, 900V, 51A, IGBT

This post explains for the IGBT.

The Full Part Number is G4PF50WD, IRG4PF50WD.

The package is TO-247AC type.

The function of this semiconductor is 900V, 51A, Insulated-Gate Bipolar Transistor.

The manufacturers of this product is International Rectifier.

See the preview image and the PDF file for more information.

Preview images :

1 page
G4PF50WD pinout igbt

Description

G4PF50WD is 900V, 51A, Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

Features

1. Optimized for use in Welding and Switch-Mode Power Supply applications

2. Industry benchmark switching losses improve efficiency of all power supply topologies

3. 50% reduction of Eoff parameter

4. Low IGBT conduction losses

5. Latest technology IGBT design offers tighter parameter distribution coupled with exceptional reliability

6. IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

Benefits :

1. Lower switching losses allow more cost-effective operation and hence efficient replacement of larger-die MOSFETs up to 100kHz

2. HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses

 

G4PF50WD pdf datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 900 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 51 A

4. Collector dissipation : Pc = 200 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

G4PF50WD PDF Datasheet

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G80N60UFD PDF Datasheet – 600V, 80A, IGBT – Fairchild

This post explains for the IGBT.

The Part Number is G80N60UFD, SGH80N60UFD.

The function of this semiconductor is 600V, 80A, Ultrafast IGBT.

The package is TO-3P Type

Manufacturer: Fairchild Semiconductor

Preview images :

1 page
transistor G80N60UFD pdf datasheet

Description

Fairchild’s UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.

G80N60UFD stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

Features

• High speed switching

• Low saturation voltage : VCE(sat) = 2.1 V @ IC = 40A

• High input impedance

• CO-PAK, IGBT with FRD : trr = 50ns (typ.)

 

G80N60UFD igbt pinout

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 80 A

4. Collector dissipation : Pd = 195 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. AC & DC motor controls, general purpose inverters, robotics, and servo controls.

 

G80N60UFD PDF Datasheet

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