F9540N Datasheet PDF – 100V, HEXFET Power MOSFET

Part Number: IRF9540N

Function: Vdss = -100V, HEXFET Power MOSFET

Package: TO-220AB

Manufacturer: IR ( International Rectifier ), Infineon ( https://www.infineon.com/ )

Images

F9540N MOSFET Transistor

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

 

Pinout

F9540N datasheet pinout

Features

1. Advanced Process Technology

2. Dynamic dv/dt Rating

3. 175°C Operating Temperature

4. Fast Switching

5. P-Channel

6. Fully Avalanche Rated

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

 

F9540N Datasheet

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NJW21194G Datasheet – 16A, 250V, NPN Transistor

NJW21194G is a high-speed, high-current, NPN bipolar junction transistor (BJT) designed for use in audio amplifier applications.

Function: 16A, 250V, 200W, NPN Power Transistor

Package: TO-3P Type

Manufacturer: ON Semiconductors

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NJW21194G datasheet

Description

The NJW21193G and NJW21194G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.

Features

• Total Harmonic Distortion Characterized

• High DC Current Gain

• Excellent Gain Linearity

• High SOA

• These Devices are Pb−Free and are RoHS Compliant

Pinouts

NJW21194G pinout

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 250 V

2. Collector to Emitter Voltage: Vceo = 400 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 16 A

5. Total Dissipation: Pd = 200 W

6. Junction Temperature: Tj = -65 ~ +150°C150°C

7. Storage Temperatue: Tsg = -65 ~ +150°C

 

Applications

1. Audio amplifier circuits, including high-fidelity audio amplifiers

2. Professional audio equipment, power amplifiers for speakers

Other data sheets within the file : PNP Type ( NJW21193G )

NJW21194G Datasheet PDF