P10N60C PDF Datasheet – 600V, 9.5A, MOSFET, FQP10N60C

Part Number: P10N60C, FQP10N60C

Function: 600V, 9.5A, QFET MOSFET, Transistor

Package: TO-220, TO-220F Type

Manufacturer: Fairchild Semiconductor

Images:

1 page
mosfet P10N60C pdf pinout

Description

P10N60C is 600V, 9.5A, N-Channel MOSFET(Metal Oxide Semiconductor Field Effect Transistor).
This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

3 page
transistor P10N60C datasheet

Features

1. 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V

2. Low gate charge ( typical 44 nC)

3. Low Crss ( typical 18 pF)

4. Fast switching

5. 100% avalanche tested

6. Improved dv/dt capability

Other data sheets are available within the file: FQP10N60C, FQPF10N60C

P10N60C PDF Datasheet

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P3055LDG PDF Datasheet – 25V, 12A, N-Ch, MOSFET

Part Number: P3055LDG

Function: 25V, 12A, N-Channel Mode Field Effect Transistor

Package: TO-252 Type

Manufacturer: Niko

Images:

1 page
P3055LDG mosfet datasheet
1. GATE 2. DRAIN 3. SOURCE

Description

P3055LDG is N-Channel Logic Level Enhancement Mode Field Effect Transistor.

An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 25 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 12 A

4. Total Power Dissipation: Pd = 48 W

5. Avalanche energy: Eas = 60 mJ

6. Channel temperature: Tch = 150 °C

7. Storage temperature: Tstg = -55 to +150 °C

 

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P3055LDG pdf equivalent

P3055LDG PDF Datasheet

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